Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-08-20

著者

• Ohba Yasuo

  Research And Development Center Toshiba Corporation

• Eguchi Kazuhiro

  Research And Development Center Toshiba Corporation

• KUSHIBE Mitsuhiro

  Research and Development Center, Toshiba Corporation

• FUNAMIZU Masahisa

  Research and Development Center, Toshiba Corporation

• Funamizu Masahisa

  Research And Development Center Toshiba Corporation

• Kushibe Mitsuhiro

  Research And Development Center Toshiba Corporation

関連論文

• Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition
• Fabrication and Characterization of AlGaN/GaN Double-Heterolaser Structures on Sapphire Substrates Using Single Crystalline AIN Buffer Layers
• Modulation-Doped In_Al_P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices
• H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
• Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

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