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Research and Development Center, TOSHIBA Corporation | 論文
- System-Level Compensation Approach to Overcome Signal Saturation, DC Offset, and 2nd-Order Nonlinear Distortion in Linear Direct Conversion Receiver (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- Resist and Sidewall Film Rermoval after AT Reactive Ion Etching (RIE) Employing F+H_2O Downstream Ashing
- Experimental Analysis of Velocity Overshoot Degradation in Sub-0.1 μm Fully-Depleted SOI-MOSFETs
- Design of Fully Balanced Analog Systems Based on Ordinary and/or Modified Single-Ended Opamps (Special Section on Analog Circuit Techniques and Related Topics)
- Fabrication and Characterization of AlGaN/GaN Double-Heterolaser Structures on Sapphire Substrates Using Single Crystalline AIN Buffer Layers
- Tritium Breeding in DT-DD Hybrid Pellet for Inertial Confinement Fusion
- Fluid-Structure Interaction Analysis Program for Axisymmetric Structures
- Effects of Zn Electrical Activity on Band Gap Energy in Zn-Doped InGaAlP Grown by Metalorganic Chemical Vapor Deposition (SOLID STATE DEVICES AND MATERIALS 1)
- Confirmation of P-Type Conduction in Li-Doped ZnSe Layers Grown on GaAs Substrates
- Role of Species Generated from Phosphorus Sources in InGaP Growth Mechanism
- Ab Initio Molecular Orbital Study on the Reaction of Trimethylaluminum with an H Radical
- Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine
- Fundamental Studies on Quantum Interconnections between Ballistic Electrons and Cellular Architecture
- An Adder-Free Method for a Small Size π/4 Shift QPSK Signal Generator (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
- Anomalous Transition in Charge Transport Behavior of Polysilane
- A Pattern Synthesis Method for Multibeam Reflector Antennas
- Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemieal Vapor Deposition
- Evaluation of Electrical Properties GaP Crystals by Optical Absorption
- Electron Traps in Si p^+nn^+ Diodes Created by 10 MeV Electron Irradiation
- The Shell Surface Force Caused by Mould Friction during Slab Continuous Casting