Experimental Analysis of Velocity Overshoot Degradation in Sub-0.1 μm Fully-Depleted SOI-MOSFETs

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概要

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• We have experimentally investigated the carrier velocity overshoot and the physical mechanism for the carrier velocity degradation in fully-depleted silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs). In sub-0.1 μm region, the velocity overshoot greater than 1×10^7 cm/s is realized at room temperature when the gate drive is low. However, in the higher gate drive region, the carrier velocity is degraded remarkably. The velocity degradation due to the self-heating effects is found to be smaller than the degradation caused by the increase of the vertical field. Moreover, in addition to the above velocity degradation mechanism, the velocity is also degraded by some anomalous scattering at higher gate drive. However, in sub-0.1 μm SOI-nMOSFETs, a high performance can be achieved by using the velocity overshoot effect at a low supply voltage.

• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Mizuno Tomohisa

  Research And Development Center Toshiba Corporation

• Ohba Ryuji

  Research And Development Center Toshiba Corporation

• Mizuno Tomohisa

  Research and Development Center, Toshiba Corporation

関連論文

• Experimental Analysis of Velocity Overshoot Degradation in Sub-0.1 μm Fully-Depleted SOI-MOSFETs
• Velocity Overshoot and G_m Limitation in sub-0.1μm Fully-Depleted SOI-MOSFETs

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