Velocity Overshoot and G_m Limitation in sub-0.1μm Fully-Depleted SOI-MOSFETs

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• Mizuno Tomohisa

  Research And Development Center Toshiba Corporation

• Ohba Ryuji

  Research And Development Center Toshiba Corporation

• Ohba Ryuji

  Research and Development Center, Toshiba Corporation

関連論文

• Experimental Analysis of Velocity Overshoot Degradation in Sub-0.1 μm Fully-Depleted SOI-MOSFETs
• Velocity Overshoot and G_m Limitation in sub-0.1μm Fully-Depleted SOI-MOSFETs

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