Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemieal Vapor Deposition
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概要
- 論文の詳細を見る
The influence of nitrogen incorporation in a-Si:H films by mercury-photosensitized decomposition of a silane-ammonia gas mixture was investigated. It was found that there are two different film structures of a-Si:H films. In a high nitrogen concentration, nitrogen is one of the elements of the a-SiN_x, alloy. On the other hand, in a low nitrogen concentration, nitrogen plays the role of a dopant in a-Si:H, and nitrogen-induced localized states are created at around 0.5 eV above the valence band edge.
- 社団法人応用物理学会の論文
- 1991-01-01
著者
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Nakajima Mitsuo
Research And Development Center Toshiba Corporation
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ITO Hiroshi
Research Institute for Food Science, Kyoto University
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HIRAMATSU Masato
Research and Development Center, Toshiba Corporation
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KAMIMURA Takaaki
Research and Development Center, Toshiba Corporation
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Hiramatsu Masato
Research And Development Center Toshiba Corporation
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Kamimura Takaaki
Research And Development Center Toshiba Corporation
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ITO Hiroshi
Research and Development Center, Toshiba Corp.
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- Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemieal Vapor Deposition
- Mercury-Sensitized Hydrogen Radical Photoetching of Undoped Hydrogenated Amorphous Silicon and Crystalline Silicon
- Characteristics for a-Si:H Films Prepared by Mercury-Sensitized Photochemical Vapor Deposition
- Effect of Hydrogen Dilution of Silane in Hydrogenated Amorphous Silicon Films Prepared by Photochemical Vapor Deposition
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