Anomalous Transition in Charge Transport Behavior of Polysilane
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概要
- 論文の詳細を見る
Anomalous transition of the dispersion parameter α was observed for the first time in poly (n-butyl-n-pentylsilane) (PBPS). Time-of-flight photocurrent (I) of PBPS was measured. The photocurrent transient was dispersive: I∞t^<-(1-α)>. The dispersion parameter a dropped around the glass transition temperature T_g with increasing temperature, and became temperature-independent above T_g. The mobility was described within the framework of a formalism based on disorder due to Bassler and coworkers. Both the diagonal disorder parameter σ, the variance of the density of states, and the off-diagonal disorder parameter Σ, the degree of positional disorder, decreased around T_g. Nevertheless the ratio of the off-diagonal disorder parameter Σ to the diagonal disorder parameter σ was found to increase above the transition temperature. This anomalous transition is rationalized by the assumption that the off-diagonal disorder dominates charge transport in PBPS above T_g.
- 社団法人応用物理学会の論文
- 1995-07-30
著者
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NISHIZAWA Hideyuki
Research Development Center, Toshiba Corp.
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NAKANO Yoshihiko
Research and Development Center, Toshiba Corporation
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Hiraoka Toshiro
Research And Development Center Toshiba Corporation
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Majima Yutaka
Research And Development Center Toshiba Corporation
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Hayase S
Graduate School Of Life Science And Systems Engineering Kyushu Institute Of Technology
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HAYASE Shuzi
Research and Development Center, Toshiba Corporation
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Nakano Yoshihiko
Research And Development Center Toshiba Corporation
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Nishizawa Hideyuki
Research And Development Center Toshiba Corporation
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