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Renesas Technology Corp. | 論文
- 携帯電話向けアプリケーションプロセッサに最適なスタンバイ電流性能25μA/MbitのオンチップSRAM(新メモリ技術,メモリ応用技術,一般)
- A 4500 MIPS/W, 86μA Resume-Standby, 11μA Ultra-Standby Application Processor for 3G Cellular Phones(Digital, Low-Power LSI and Low-Power IP)
- An Embedded Processor Core for Consumer Appliances with 2.8GFLOPS and 36 M Polygons/s FPU(System Level Design)(VLSI Design and CAD Algorithms)
- Development of an Enterprise-Wide Yield Management System Using Critical Area Analysis for High-Product-Mix Semiconductor Manufacturing
- A Range-Shift Technique for TOF Range Image Sensors
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
- A Novel Layout Approach Using Dual Supply Voltage Technique on Body-Tied PD-SOI(Floorplan)(VLSI Design and CAD Algorithms)
- Design and Evaluation of a Massively Parallel Processor Based on Matrix Architecture(Novel Device Architectures and System Integration Technologies)
- A 126mm^2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology(Integrated Electronics)
- CS-3-5 Transmitter Architectures for Mobile Phone Applications(CS-3. 超高速・高周波デバイス・回路・モジュールのための高密度Jisso技術, エレクトロニクス1)
- D-12-38 Frequency Plan for GSM/DCS1800 Dual-band Direct-conversion Radio
- An Embedded DRAM Hybrid Macro with Auto Signa Management and Enhanced-on-Chip Tester
- A 0.18 ★m 32 Mb Embedded DRAM Macro for 3-D Graphics Controller
- A Fast Characterizing Method for Large Embedded Memory Modules on SoC(Selected Papers from the 19th Workshop on Circuits and Systems in Karuizawa)
- A Method of Precise Estimation of Physical Parameters in LSI Interconnect Structures(Interconnect, VLSI Design and CAD Algorithms)
- A Board Level Parallel Test Circuit and a Short Circuit Failure Repair Circuit for High-Density, Low-Power DRAMs (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- A Mixed-Mode Voltage Down Converter with Impedance Adjustment Circuitry for Low-Voltage High-Frequency Memories
- An Advanced Air Gap Process for MLC flash memories reducing Vth interference and realizing high reliability
- Determination of Interconnect Structural Parameters for Best-and Worst-Case Delays(Selected Papers from the 18th Workshop on Circuits and Systems in Karuizawa)