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Mirai-aset | 論文
- Nondestructive characterization of dielectric stack structures by laser-pulse-generated surface acoustic wave analysis
- The structural origin of determining the coefficient of thermal expansion for porous silica low-k films
- Nondestructive characterization of temperature-dependent backbone Si-O-Si structure in porous silica films by in-situ Fourier-transform infrared spectroscopy
- Infrared Complex Dielectric Function Analysis for Chemical Bonding Structure of Porous Silica Low Dielectric Constant Films
- Adsorption in-situ Spectroscopic Ellipsometry Analysis of Disordered Porous Silica Low-k Films
- Comparison of Pore Shape Models for Small Angle X-ray Scattering of a Disordered Porous Silica Low-k Film
- Electrical Characteristics of Porous Zeolite Interlayer Dielectrics
- Microstructure Characterization of Skeletal Silica in Porous Low-k Films by Infrared Spectroscopic Ellipsometry
- Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates
- Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon--Germanium Wire Tri-Gate Metal--Oxide--Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain
- Integration of Self-Assembled Porous Silica in Low-$k$/Cu Damascene Interconnects
- Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
- Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates
- Experimental Evidence of Coexistence of Interface Traps Interacting with Majority and Minority Carriers in Ge MIS Structures
- Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs
- Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain
- Plasma Etch Rates of Porous Silica Low-$k$ Films with Different Dielectric Constants
- Recovery from Plasma-Process-Induced Damage in Porous Silica Low-$k$ Films by Organosiloxane Vapor Annealing
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
- Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode