Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Hirashita N.

  Mirai-aset

• Irisawa T.

  Mirai-aset

• MIZUNO T.

  MIRAI-AIST

• MORIYAMA Y.

  MIRAI-ASET

• TEZUKA T.

  MIRAI-ASET

• SUGIYAMA N.

  MIRAI-ASET

• TAKAGI S.

  MIRAI-AIST

関連論文

• Experimental Evidence of Coexistence of Interface Traps Interacting with Majority and Minority Carriers in Ge MIS Structures
• Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain

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