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Fundamental Res. Labs., NEC Corporation | 論文
- Nanometer-Scale Patterning of Polystyrene Resists in Low-Voltage Electron Beam Lithography
- Calixarene Electron Beam Resist for Nano-Lithography
- Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography
- Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650
- FIB Exposure Characteristics of LB Film
- Fabrication and Magnetotransport of One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Ion Irradiation
- Resolution of 1:1 Electron Stepper with Patterned Cold Cathode
- Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
- Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
- Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
- Measurement of Sidewall Roughness by Scanning Tunneling Microscope : Inspection and Testing
- Measurement of Sidewall Roughness by Scanning Tunneling Microscope
- Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance
- Sub-10-nm-Scale Lithography Using p-chloromethyl-methoxy-calix[4]arene Resist
- Synthesis of Superconducting Epitaxial Films of Ba_K_xBiO_3 by Laser Ablation
- Reverse Dry Etching Using a High-Selectivity Carbon Mask Formed by Electron Beam Deposition
- GaAs Dry Etching Using Electron Beam Induced Surface Reaction
- High-Quality GaAs/AlAs Buried Heterostructures Grown by Molecular Beam Epitaxy on Patterned Substrates
- Focused-Ion-Beam Surface Modification for Selective Growth of InP Wires on GaAs
- Cl Atom Desorption by Chemical Reaction with Al Atom on Si(111) 7 × 7 Studied by Scanning Tunneling Microscopy