スポンサーリンク
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan | 論文
- Temperature-Measurement System Using Optical Fiber-Type Low-Coherence Interferometry for MultiLayered Substrate
- Cleaning of Glass Disk in Oxygen Plasma by Using Compact Electron-Beam-Excited Plasma Source
- Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
- Development of Atmospheric Pressure Plasma Jet with Slit Nozzle
- Deposition of Diamond-Like Carbon Using Compact Electron-Beam-Excited Plasma Source
- Investigation of Nitrogen Atoms in Low-Pressure Nitrogen Plasmas Using a Compact Electron-Beam-Excited Plasma Source
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
- GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
- Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
- Correlation between Device Performance and Defects in GaInN-Based Solar Cells
- Line-Profiles and Translational Temperatures of Pb Atoms in Multi-Micro Hollow Cathode Lamp Measured by Diode Laser Absorption Spectroscopy
- Properties of Indium--Zinc-Oxide Films Synthesized by Radio Frequency Magnetron Sputtering Based on Gas Phase Monitoring Using Multi-Micro Hollow Cathode Lamp
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
- Indium--Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
- X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source
- Inactivation Process of Penicillium digitatum Spores Treated with Non-equilibrium Atmospheric Pressure Plasma
- X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
- Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures