X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source

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概要

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• The mechanism of GaAs(111)B surface nitridation using an RF-radical source was studied while systematically changing the nitridation temperature. Atomic force microscopy and X-ray photoemission spectroscopy measurements indicated that the nitridation of the GaAs(111)B surface showed a similar dependence on nitridation temperature to that of a GaAs(001) surface. Both the degree of nitridation and the Ga adatom density increased with increasing nitridation temperature, and above 510 °C, Ga droplets were formed. Strong photoluminescence signals were obtained from the GaAs(111)B surfaces.

• 2012-04-25

著者

• Maruyama Takahiro

  Faculty Of Engineering And Resourse Science Akita University

• Takeuchi Yoshitaka

  Faculty Of Science And Technology Keio University

• Naritsuka Shigeya

  Faculty of Science and Technology, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

• Naritsuka Shigeya

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Mori Midori

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Maruyama Takahiro

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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