Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor

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概要

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• A vertical-cavity surface-emitting laser (VCSEL) was fabricated using a in situ reflectance monitor by molecular beam epitaxy (MBE). Both the center wavelength of the stop band of the distributed Bragg reflector (DBR) and the resonant wavelength of the optical cavity were successfully controlled using the monitor. However, these wavelengths shifted with decreasing substrate temperature after the growth, which could be reasonably explained by the temperature dependence of refractive index. Therefore, it is necessary to set a target wavelength at a growth temperature, considering the change. The desirable laser performance of the VCSEL fabricated from the wafer indicates marked increases in the controllability and reproducibility of growth with the aid of the in situ reflectance monitor. Since it can directly measure the optical properties of the grown layers, the reflectance monitor greatly helps in the fabrication of a structure with the designed optical performance.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• Maruyama Takahiro

  Faculty Of Engineering And Resourse Science Akita University

• Naritsuka Shigeya

  Faculty of Science and Technology, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

• Mizutani Mitsuhiro

  Faculty of Science and Technology, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

• Maruyama Takahiro

  Faculty of Science and Technology, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

• Teramae Fumiharu

  Faculty of Science and Technology, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

• Takeuchi Kazutaka

  Faculty of Science and Technology, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

• Murase Tatsunori

  Faculty of Science and Technology, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

関連論文

• Synthesis and Electrical Properties of Cation Deficient Perovskite-type Oxides in the Ln-A-Ti-AI-0 System (Ln = La, Nd;A=Ca, Sr).
• X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source
• Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor
• X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

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