X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

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概要

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• The nitridation mechanism of the GaAs(001) surface using an RF-radical source at a low temperature of 350 °C was systematically studied by changing the As supply and nitridation time to obtain a smooth nitrided layer without the formation of Ga droplets. Atomic force microscopy (AFM) measurements indicated that supplying As is useful in suppressing the re-evaporation of As atoms and in maintaining a smooth surface. However, the degree of nitridation was decreased with increasing As pressure in the samples nitrided for 30 min. In contrast, the time dependence of nitridation indicated that the degree of nitridation increases with nitridation time. After optimizing the conditions, a two-monolayer-thick GaN layer was successfully obtained by nitridation for 120 min, regardless of the supply of the As molecular beam. The structure of the nitrided layers was also investigated using angle-resolved X-ray photoemission spectroscopy, and a thin layer that contains As and N atoms was found to cover the nitrided GaN layer.

• 2012-01-25

著者

• Maruyama Takahiro

  Faculty Of Engineering And Resourse Science Akita University

• Takeuchi Yoshitaka

  Faculty Of Science And Technology Keio University

• Naritsuka Shigeya

  Faculty of Science and Technology, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

• Mori Midori

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Monno Yohei

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Maruyama Takahiro

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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• X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

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