スポンサーリンク
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo, | 論文
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
- Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
- Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
- Step Coverage Analysis for Hexamethyldisiloxane and Ozone Atmospheric Pressure Chemical Vapor Deposition
- Adhesion Characteristics between Chemical Vapor Deposited Cu and TiN Films : Aspects of Process Integration
- Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
- Nucleation of W during Chemical Vapor Deposition from WF6 and SiH4
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP