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Department Of Electronic Engineering Graduate School Of Engineering Tohoku University | 論文
- Fully-Parallel VLSI Implementation of Vector Quantization Processor Using Neuron-MOS Technology (Special Issue on Integrated Electronics and New System Paradigms)
- Minimization of BF^+_2-Implantation Dose to Reduce the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
- Reduction of BF2+-Implantation Dose to Minimize the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
- A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
- Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
- Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
- Neuron MOS Analog/Digital Merged Circuit Technology For Center-Of-Mass Tracker Circuit
- Magnetic Domain Structure of Fe_3Al Alloy with Two-Phase Mixture Studied by Lorentz Microscopy
- ニューダイヤモンド,ニューカーボンと電子放出の将来
- Non-LTE Line-Formation and Abundances of Sulfur and Zinc in F, G, and K Stars
- Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
- Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
- Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O_2 Microwave Excited High-Density Plasma
- Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
- Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity
- High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma
- Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Photoemission and Bremsstrahlung from Uranium Compounds : Chapter 4. Optical Properties : 4-1. Photoemission and inverse Photoemission Studies of Electronic Structures