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Department Of Electronic Engineering Graduate School Of Engineering Tohoku University | 論文
- A Case of Interferon Alpha-Induced Manic Psychosis in Chronic Hepatitis C
- 27aYN-6 2層カーボンナノチューブの超高速ダイナミクス(ナノチューブ物性2(光物性),領域7(分子性固体・有機導体))
- Effect of in-situ Formed Interlayer at Ta-SiO_2 interface on Performance and Reliability in Ta-Gate MOS Devices
- A Fine-Grained Programmable Logic Module with Small Amount of Configuration Data for Dynamically Reconfigurable Field-Programmable Gate Array
- What does the Public Ask of the JATS? : Results and Feedback about Insufficient Public Information Distribution
- Silicon Wafer Orientation Dependence of Metal Oxide Sermiconductor Device Reliability
- Effect of antiferromagnetic grain size on exchange anisotropy in Ni-Fe/25 at% Ni-Mn films
- Downregulation of miR-138 is associated with overexpression of human telomerase reverse transcriptase protein in human anaplastic thyroid carcinoma cell lines
- 12pWF-13 単層カーボンナノチューブの磁性分子吸着特性 (III)(ナノチューブ物性, 領域 7)
- Fast and Efficient MRF-Based Detection Algorithm of Missing Data in Degraded Image Sequences
- Oral etodolac, a COX-2 inhibitor, reduces postoperative pain immediately after fast-track cardiac surgery
- Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation
- Preoxide-Controlled Oxidation for Very Thin Oxide Films
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
- Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
- Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
- Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
- Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Eneapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550℃
- Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process
- Measurement of Rapid Variation in Ultrasound Backscattering During Change in Thickness of Tissue Phantom