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Department Of Electronic Engineering Graduate School Of Engineering Tohoku University | 論文
- PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing
- Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
- Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer
- Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma Generation
- A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
- A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
- A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
- Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Interconnect and Substrate Structure for Gigascale Integration
- Interconnect and Substrate Structure for High Speed Giga-Scale Integration
- Abrupt and Arbitrary Profile Formation in Silicon Using a Low-Kinetic-Energy Ion Bombardment Process
- Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy
- Three Dimensional Monitoring of Stack Plume Dynamics by a Scanning Mie Lidar System as a Plume Watchdog Station
- Experimental Discussion on Eye-Safe 1.54μm Photon Counting Lidar Using Avalanche Photodiode
- Sodium temperature lidar observation at Syowa Station: Summary of three-year observations and unusually high temperature in 2002
- 29pZP-13 単層カーボンナノチューブの磁性分子吸着特性(II)(ナノチューブ(伝導特性・磁性))(領域7)
- 総論/カーボンナノチェーブの機能と応用の展望 (特集 カーボンナノチューブ)
- 触媒金属組み合わせによるナノチューブ成長制御とナノチューブ先端構造(カーボンナノチューブの成長とその応用)
- 23aXF-13 CNT-CNT 相互作用の TEM 中でのその場観察
- 22aXF-10 単層カーボンナノチューブの磁性分子吸着特性