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Department Of Electrical Engineering National Chi-nan University | 論文
- Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi_2 and TiSi_2 Gate Electrode Materials
- High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for UWB RFIC Applications
- MEMS 3-D Stacked RF Transformers Fabricated by 0.18μm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances
- An Analysis of the Kink Effect of Scattering Parameter S_ in RF Power MOSFETs for System-On-Chip (SOC) Applications
- An Analysis of Layout and Temperature Effects on Magnetic-Coupling Factor, Resistive-Coupling Factor, and Power Gain Performances of RF Transformers for RFIC Applications
- An Analysis of the Anomalous Dip in Scattering Parameter S_ of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)
- Analysis, Design, and Optimization of Matched-Impedance Wide-Band Amplifiers With Multiple Feedback Loops Using 0.18 μm Complementary Metal Oxide Semiconductor Technology
- An Analysis of Size Effect on the Performances of Low-Leakage 0.10 μm Complementary Metal Oxide Semiconductor for 5-GHz Band Low-Power RF-ICs and Static Random Access Memory Applications
- Modeling Nanoscale Current Conduction in HfO2 High-$k$ Dielectrics
- Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
- On Step-by-Step Complete Decoding Triple-Error-Correcting Binary BCH Codes(Coding Theory)
- Improvement in the Cumulative Failure Distribution of High-$k$ Dielectric Subjected to Nanoscale Stress by D2 Post-Deposition Annealing
- Temperature-Dependence of the $Q$-Factor and Noise Figure Performances of a Spiral Inductor with an Advanced Mixed-Signal/RF Complementary Metal–Oxide–Semiconductor Technology
- A Pipeline Structure for High-Speed Step-by-Step RS Decoding
- A Miniature Micro-Machined Millimeter-Wave Bandpass Filter By Complementary Metal–Oxide–Semiconductor Compatible Inductively-Coupled-Plasma Deep-Trench Technology
- Uniformly Distributed Wideband Metal–Oxide–Semiconductor Field-Effect Transistor Model for Complementary Metal–Oxide–Semiconductor Radio-Frequency Integrated Cirsuits Applications
- A Novel Coplanar-Waveguide Band-Pass Filter Utilizing the Inductor--Capacitor Structure in 0.18 μm Complementary Metal--Oxide--Semiconductor Technology for Millimeter-Wave Applications
- An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP–InGaAs, InGaP–GaAs, and SiGe Heterojunction Bipolar Transistors
- Low-leakage 0.11 μm CMOS for Low-Power RF-ICs and SRAMs Applications
- Novel Dry-Type Glucose Sensor Based on a Metal–Oxide–Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer