Temperature-Dependence of the $Q$-Factor and Noise Figure Performances of a Spiral Inductor with an Advanced Mixed-Signal/RF Complementary Metal–Oxide–Semiconductor Technology
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In this paper, we demonstrate an analysis of the effect of temperature (from $-50$°C to 200°C) on the quality factor ($Q$-factor) and noise figure ($\mathit{NF}$) performances of a spiral inductor with an advanced mixed-signal/RF complementary metal–oxide–semiconductor (CMOS) technology for the first time. $Q$-factor and power gain ($G_{\text{A}}$) decrease with increasing temperature but show a reverse behavior within a higher frequency range, while stability factor ($K$-factor) and $\mathit{NF}$ increase with increasing temperature but show a reverse behavior within a higher frequency range. The reverse frequencies $f_{\text{R}}$’s, which correspond to the zero temperature coefficients of $G_{\text{A}}$, $K$-factor, and $\mathit{NF}$, are almost the same. This phenomenon can be explained by the positive temperature coefficients of the metal series resistance ($R_{\text{s}}$) and the substrate impedance ($Z_{\text{sub}}$). The present analysis enables RF engineers to understand more deeply the $\mathit{NF}$ (i.e. power loss) behavior of inductors fabricated on a silicon substrate, and hence is helpful for them to design less temperature-sensitive fully on-chip low-noise-amplifiers (LNA’s) and other radio-frequency integrated circuits (RF-IC’s).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
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