Analysis, Design, and Optimization of Matched-Impedance Wide-Band Amplifiers With Multiple Feedback Loops Using 0.18 μm Complementary Metal Oxide Semiconductor Technology

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概要

• 論文の詳細を見る

• The realization of matched-impedance wide-band amplifier fabricated by 0.18 μm complementary metal oxide semiconductor (CMOS) process is reported. The technique of multiple feedback loops was used in the amplifier for terminal impedance matching and wide bandwidth simultaneously. The experimental results show that 3-dB bandwidth of 3 GHz and a gain of 10.7 dB with in-band input/output return loss more than 10 dB are obtained. These values agree well with those predicted from the analytic expressions derived for voltage gain, trans-impedance gain, bandwidth, and input/output return loss and impedance. In addition, the use of source capacitive peaking technique can improve the intrinsic over-damped characteristic of this amplifier.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• LIN Yo-Sheng

  Department of Electrical Engineering, National Chi Nan University

• Lee Tai-hsing

  Department Of Electrical Engineering National Chi-nan University

• Lin Yo-sheng

  Department Of Electrical Engineering National Chi-nan University

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