An Analysis of the Anomalous Dip in Scattering Parameter S_<11> of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-06-15

著者

• Lu Shey-shi

  Department Of Electrical Engineering National Taiwan University

• LIN Yo-Sheng

  Department of Electrical Engineering, National Chi Nan University

• Lin Yo-sheng

  Department Of Electrical Engineering National Chi-nan University

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