High-Performance In_<0.49>Ga_<0.51>P/GaAs Tunneling Emitter Bipolar Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-30

著者

• Lu Shey-shi

  Department Of Electrical Engineering National Taiwan University

• Wu C‐c

  Department Of Electrical Engineering National Taiwan University

• WU Chung-Cheng

  Department of Electrical Engineering, National Taiwan University

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• High-Performance In_Ga_P/GaAs Tunneling Emitter Bipolar Transistors
• An Analysis of the Anomalous Dip in Scattering Parameter S_ of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)
• An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP–InGaAs, InGaP–GaAs, and SiGe Heterojunction Bipolar Transistors

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