An Analysis of the Kink Effect of Scattering Parameter S_<22> in RF Power MOSFETs for System-On-Chip (SOC) Applications

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概要

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• In this paper, the kink effect in scattering parameter S_<22> of RF power MOSFETs for System-On-Chip (SOC) applications is explained quantitatively for the first time. The calculated S_<22> of RF power MOSFETs conforms well to the experimental data. In addition, our results show that for RF power MOSFETs, the output impedance can be represented by a "shifted" series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies. The appearance of the kink point of S_<22> in a Smith chart is caused by this inherent ambivalent characteristic of the output impedance. If gate-drain resistance is increased, then from our derived equations, the kink point moves to a new intercept point with a larger resistance (r) and a smaller conductance (g) at a smaller frequency, which makes the kink effect more prominent. The present analyses enable RF engineers to understand the behaviors of S-parameters more deeply, and hence are helpful for them to create a fully scalable CMOS model for SOC applications.

• 社団法人電子情報通信学会の論文
• 2002-11-28

著者

• Lu Shey-shi

  Department Of Electrical Engineering National Taiwan University

• Lu Shey‐shi

  Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw

• Lu S‐s

  Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw

• Liang Hsiao-bin

  Department Of Electrical Engineering National Chi Nan University

• LIN Yo-Sheng

  Department of Electrical Engineering, National Chi Nan University

• Lin Y‐s

  Department Of Electrical Engineering National Chi Nan University

• Lin Yo-sheng

  Department Of Electrical Engineering National Chi-nan University

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