An Analysis of Size Effect on the Performances of Low-Leakage 0.10 μm Complementary Metal Oxide Semiconductor for 5-GHz Band Low-Power RF-ICs and Static Random Access Memory Applications

概要

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In this paper, we demonstrate the size effect on the DC and RF performances of 0.10 μm RF metal–oxide–semiconductor field effect transistors (MOSFETs) for 5-GHz band low-power radio-frequency integrated circuits (RF-ICs) and high-speed static random access memory (SRAM) applications. It was found that either one of the increase of device’s width, the increase of gate-source voltage (when its corresponding transconductance ($g_{\text{m}}$) is smaller than the maximum $g_{\text{m}}$), and the decrease of measurement temperature can enhance the kink effect of both scattering parameters $S_{11}$ and $S_{22}$ because of the increase of $g_{\text{m}}$. A device with larger gate-width exhibits better RF noise and power performances because of higher gain and the lighter effect of parasitic extrinsic elements. In addition, the directly extracted equivalent Pucel’s noise parameters $P$, $R$, and $C$ of the MOSFETs can be used to calculate the noise figures of LNA’s/mixers and the phase noise of oscillators, and thus is very helpful in the design of RF circuits.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-08-15