A Novel Coplanar-Waveguide Band-Pass Filter Utilizing the Inductor--Capacitor Structure in 0.18 μm Complementary Metal--Oxide--Semiconductor Technology for Millimeter-Wave Applications

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概要

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• A low-insertion-loss V-band complementary metal--oxide--semiconductor (CMOS) band-pass filter is demonstrated. The proposed filter architecture has the following features: the low-frequency transmission-zero (\omega_{\text{z1}}) and the high-frequency transmission-zero (\omega_{\text{z2}}) can be tuned individually by adjusting the value of the series capacitor (C_{\text{s}}) and the size of the built-in inductor--capacitor (LC) resonator, respectively. The folded short-stub technique is used to reduce the chip size of the filter. To reduce the silicon substrate loss, the CMOS-process-compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, the filter achieves insertion-loss (1/S_{21}) lower than 3 dB over the frequency range of 46.5--85.5 GHz. The minimum insertion-loss is -1.8 dB at 60 GHz.

• 2012-03-25

著者

• LU Shey-Shi

  Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Tai

• Lin Yo-sheng

  Department Of Electrical Engineering National Chi-nan University

• Wang Tao

  Department Of Chemistry College Of Chemistry And Chemical Engineering Xiamen University

• Lu Shey-Shi

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C.

• Huang Pen-Li

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C.

• Lin Yo-Sheng

  Department of Electrical Engineering, National Chi Nan University, Puli 545, Taiwan, R.O.C.

• Wang Tao

  Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taiwan, R.O.C.

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