Improved Crystal Quality of (11\bar{2}2) Semi-Polar GaN Grown on A Nanorod Template
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概要
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(11\bar{2}2) semi-polar GaN with significantly improved crystal quality has been achieved by means of overgrowth on a (11\bar{2}2) semi-polar nanorod template. The nanorod template was fabricated on a standard (11\bar{2}2) semi-polar GaN layer on m-plane sapphire using a self-organized nickel nano-mask technique. In comparison with any conventional overgrowth technique, the nano-mask approach has demonstrated a very quick coalescence with a thickness of less than 1 μm. X-ray rocking curve measurements as a function of azimuth angle has shown a massive reduction in linewidth for our overgrown GaN. Transmission electron microscope measurements have confirmed a significant reduction in the dislocation density. Dramatic improvement in optical properties has been exhibited by photoluminescence (PL) measurements performed at room temperature, showing that the PL intensity from the band edge emission is 30 times higher than that of the standard semi-polar GaN on sapphire.
- 2013-08-25
著者
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Bai Jie
Department Of Cell Biology And Medical Genetics The First Military Medical University
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Yu Xiang
Department Of Anatomy Faculty Of Medicine Kyoto Unviersity
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Wang Tao
Department Of Chemistry College Of Chemistry And Chemical Engineering Xiamen University
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Yu Xiang
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Wang Tao
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Xing Kun
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Gong Yipin
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Bai Jie
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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