Uniformly Distributed Wideband Metal–Oxide–Semiconductor Field-Effect Transistor Model for Complementary Metal–Oxide–Semiconductor Radio-Frequency Integrated Cirsuits Applications
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概要
- 論文の詳細を見る
In this paper, a uniformly distributed wide-band metal–oxide–semiconductor field-effect transistor (MOSFET) model constructed by several same unit cells in parallel is presented. The kink phenomenon of scattering parameter $S_{11}$ due to the distributed gate-resistance of MOSFETs can be fitted well by this model. Good agreement between the measured and modeled results of scattering parameters $S_{22}$, current gain $H_{21}$, and unilateral gain $U$ are also demonstrated. In addition, the impact of distributed gate-resistance on cut-off frequency ($ f_{\text{T}}$) and maximum oscillation frequency ($ f_{\text{max}}$) performances of single gate-finger MOSFETs with large gate-width of 20, 40, 80, 120, and 160 μm are quantitatively characterized and analyzed.
- 2008-02-25
著者
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Liang Hsiao-bin
Department Of Electrical Engineering National Chi Nan University
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Chen Chi-chen
Department Of Electrical Engineering National Chi Nan University
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Lin Yo-sheng
Department Of Electrical Engineering National Chi-nan University
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Lin Yo-Sheng
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan 54561, R.O.C.
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Chen Chi-Chen
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan 54561, R.O.C.
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Liang Hsiao-Bin
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan 54561, R.O.C.
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Tsou Yi-Hsun
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan 54561, R.O.C.
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