Lin Yo-sheng | Department Of Electrical Engineering National Chi-nan University
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概要
関連著者
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Lin Yo-sheng
Department Of Electrical Engineering National Chi-nan University
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LIN Yo-Sheng
Department of Electrical Engineering, National Chi Nan University
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Liang Hsiao-bin
Department Of Electrical Engineering National Chi Nan University
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Chen Chi-chen
Department Of Electrical Engineering National Chi Nan University
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Lu Shey-shi
Department Of Electrical Engineering National Taiwan University
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Wang Tao
Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw
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Lin Y‐s
Department Of Electrical Engineering National Chi Nan University
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Lu Shey‐shi
Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw
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Lu S‐s
Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw
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LU Shey-Shi
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Tai
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Wang Tao
Department Of Chemistry College Of Chemistry And Chemical Engineering Xiamen University
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Wang Tao
Department Of Chemistry University Of Science And Technology Of China
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CHEN Chi-Chen
Department of Electrical Engineering, National Chi Nan University
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Wang Tao
Department Of Electrical Engineering National Taiwan University
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Chen Chi-chen
Department Of Electrical Engineering National Chi-nan University
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Lee Tai-hsing
Department Of Electrical Engineering National Chi-nan University
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TZENG Yan-Ru
Department of Electrical Engineering, National Chi-Nan University
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Tzeng Yan-ru
Department Of Electrical Engineering National Chi-nan University
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Liang Hsiao-bin
Department Of Electrical Engineering National Chi-nan University
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Lu Shey-Shi
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
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Lu Shey-Shi
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.
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Lu Shey-Shi
Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.
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Lu Shey-Shi
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C.
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Chang Jin-Fa
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan
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Chen Chang-Zhi
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan
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Huang Pen-Li
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C.
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Lin Yo-Sheng
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan
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Lin Yo-Sheng
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan, R.O.C.
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Lin Yo-Sheng
Department of Electrical Engineering, National Chi-Nan University, Puli, Taiwan, R.O.C.
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Lin Yo-Sheng
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan 54561, R.O.C.
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Lin Yo-Sheng
Department of Electrical Engineering, National Chi Nan University, Puli 545, Taiwan, R.O.C.
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Chen Chi-Chen
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan
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Chen Chi-Chen
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan, R.O.C.
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Chen Chi-Chen
Department of Electrical Engineering, National Chi-Nan University, Puli, Taiwan, R.O.C.
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Chen Chi-Chen
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan 54561, R.O.C.
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Liang Hsiao-Bin
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan 54561, R.O.C.
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Liang Hsiao-Bin
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan, R.O.C.
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Wang Tao
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
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Wang Tao
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.
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Tsou Yi-Hsun
Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan 54561, R.O.C.
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Wang Tao
Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taiwan, R.O.C.
著作論文
- High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for UWB RFIC Applications
- MEMS 3-D Stacked RF Transformers Fabricated by 0.18μm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances
- An Analysis of the Kink Effect of Scattering Parameter S_ in RF Power MOSFETs for System-On-Chip (SOC) Applications
- An Analysis of Layout and Temperature Effects on Magnetic-Coupling Factor, Resistive-Coupling Factor, and Power Gain Performances of RF Transformers for RFIC Applications
- An Analysis of the Anomalous Dip in Scattering Parameter S_ of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)
- Analysis, Design, and Optimization of Matched-Impedance Wide-Band Amplifiers With Multiple Feedback Loops Using 0.18 μm Complementary Metal Oxide Semiconductor Technology
- An Analysis of Size Effect on the Performances of Low-Leakage 0.10 μm Complementary Metal Oxide Semiconductor for 5-GHz Band Low-Power RF-ICs and Static Random Access Memory Applications
- Temperature-Dependence of the $Q$-Factor and Noise Figure Performances of a Spiral Inductor with an Advanced Mixed-Signal/RF Complementary Metal–Oxide–Semiconductor Technology
- A Miniature Micro-Machined Millimeter-Wave Bandpass Filter By Complementary Metal–Oxide–Semiconductor Compatible Inductively-Coupled-Plasma Deep-Trench Technology
- Uniformly Distributed Wideband Metal–Oxide–Semiconductor Field-Effect Transistor Model for Complementary Metal–Oxide–Semiconductor Radio-Frequency Integrated Cirsuits Applications
- A Novel Coplanar-Waveguide Band-Pass Filter Utilizing the Inductor--Capacitor Structure in 0.18 μm Complementary Metal--Oxide--Semiconductor Technology for Millimeter-Wave Applications
- An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP–InGaAs, InGaP–GaAs, and SiGe Heterojunction Bipolar Transistors
- Low-leakage 0.11 μm CMOS for Low-Power RF-ICs and SRAMs Applications
- Characterization and Modeling of Pattern Ground Shield and Silicon-Substrate Effects on Radio-Frequency Monolithic Bifilar Transformers for Ultra-Wide Band Radio-Frequency Integrated Circuit Applications