Low-leakage 0.11 μm CMOS for Low-Power RF-ICs and SRAMs Applications
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概要
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In this paper, we demonstrate optimized low-leakage (LL) 0.11 μm complimentary metal-oxide-semiconductor (CMOS) FET with 193 nm lithography and Cu/low-$k$ for low-power (LP) RF-ICs and SRAMs applications. For $I_{\text{off\_nom}}$ (nominal off-state current) specification of 1 pA/μm @$V_{\text{CC}}=1.65$ V, 0.11 μmn/pMOS with excellent 520/210 μA/μm nominal drive currents were achieved @$V_{\text{CC}}=1.5$ V. Very good cut-off frequency ($f_{\text{T}}$) and maximum-oscillation frequency ($f_{\text{max}}$) of 43 GHz and 35 GHz, respectively, were attained for 0.11 μm nMOS at maximum transconductance ($g_{\text{m}}$). The anomalous dips observed in scattering parameters S11 and S22 were also analyzed. These results show that the developed 0.11 μm CMOS is very suitable for both S-band/C-band low-power radio-frequency integrated circuits (RF-ICs) and static random-access-memories (SRAMs) applications.
- 2003-04-15
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