An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP-InGaAs, InGaP-GaAs, and SiGe Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Lu Shey-shi
Department Of Electrical Engineering National Taiwan University
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Lu Shey‐shi
Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw
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Lu S‐s
Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw
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Lin Y‐s
Department Of Electrical Engineering National Chi Nan University
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Chen Chi-chen
Department Of Electrical Engineering National Chi Nan University
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