Modeling Nanoscale Current Conduction in HfO2 High-$k$ Dielectrics
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概要
- 論文の詳細を見る
Fowler–Nordheim (FN) tunneling and a two-trap-assisted tunneling (TTAT) model were adopted to describe the nanoscale current–voltage ($I$–$V$) curves of the atomic layer deposited (ALD) HfO2 before hard breakdown. Not including the hard breakdown region, all current conduction regions could be correctly simulated. Our simulation results indicated that the traps were mainly generated within one third of the oxide thickness and that the plateau region in the $I$–$V$ curves was due to the increased contribution of TTAT current in the total oxide conduction current.
- 2009-12-25
著者
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Lin Jing-jenn
Department Of Electrical Engineering National Taiwan University
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Wu You-lin
Department Of Electrical Engineering National Chi-nan University
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Wu You-Lin
Department of Electrical Engineering, National Chi Nan University, Puli, Nantou, Taiwan 54561, R.O.C.
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Hwang Chiung-Yi
Department of Electrical Engineering, National Chi Nan University, Puli, Nantou, Taiwan 54561, R.O.C.
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Lin Jing-Jenn
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, Nantou, Taiwan 54561, R.O.C.
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