Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi_2 and TiSi_2 Gate Electrode Materials

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概要

• 論文の詳細を見る
• 2006-03-25

著者

• Lai Min-yen

  Department Of Electrical Engineering National Chi-nan University

• WU You-Lin

  Department of Electrical Engineering, National Chi-Nan University

• Wu You-lin

  Department Of Electrical Engineering National Chi-nan University

関連論文

• Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi_2 and TiSi_2 Gate Electrode Materials
• Modeling Nanoscale Current Conduction in HfO2 High-$k$ Dielectrics
• Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
• Improvement in the Cumulative Failure Distribution of High-$k$ Dielectric Subjected to Nanoscale Stress by D2 Post-Deposition Annealing
• Novel Dry-Type Glucose Sensor Based on a Metal–Oxide–Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

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