Wu You-lin | Department Of Electrical Engineering National Chi-nan University
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概要
関連著者
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Wu You-lin
Department Of Electrical Engineering National Chi-nan University
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Lin Jing-jenn
Department Of Electrical Engineering National Taiwan University
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Lin Jing-Jenn
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, Nantou, Taiwan 54561, R.O.C.
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Lai Min-yen
Department Of Electrical Engineering National Chi-nan University
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WU You-Lin
Department of Electrical Engineering, National Chi-Nan University
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Hwu Jenn-gwo
Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw
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Hwu Jenn-gwo
Department Of Electrical Engineering Rm. 446 National Taiwan University
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Wu You-lin
Department Of Electrical Engineering Rm. 446 National Taiwan University
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Liang Cheng-Hsun
Department of Electrical Engineering, National Chi Nan University, 1 University Rd., Nantou, Puli, Nantou, Taiwan 54561, R.O.C.
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Hsu Po-Yen
Department of Electrical Engineering, National Chi Nan University, Puli, Nantou 545, Taiwan
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Huang Chiung-Yi
Department of Electrical Engineering, National Chi Nan University, 1 University Rd., Nantou, Puli, Nantou, Taiwan 54561, R.O.C.
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Wu You-Lin
Department of Electrical Engineering, National Chi Nan University, Puli, Nantou 545, Taiwan
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Wu You-Lin
Department of Electrical Engineering, National Chi Nan University, Puli, Nantou, Taiwan 54561, R.O.C.
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Wu You-Lin
Department of Electrical Engineering, National Chi Nan University, 1 University Rd., Nantou, Puli, Nantou, Taiwan 54561, R.O.C.
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Hwang Chiung-Yi
Department of Electrical Engineering, National Chi Nan University, Puli, Nantou, Taiwan 54561, R.O.C.
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Lin Jing-Jenn
Department of Electronics Engineering, Fortune Junior College of Technology and Commerce, Kaohsiung 831, Taiwan
著作論文
- Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi_2 and TiSi_2 Gate Electrode Materials
- Modeling Nanoscale Current Conduction in HfO2 High-$k$ Dielectrics
- Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
- Improvement in the Cumulative Failure Distribution of High-$k$ Dielectric Subjected to Nanoscale Stress by D2 Post-Deposition Annealing
- Novel Dry-Type Glucose Sensor Based on a Metal–Oxide–Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer