Novel Dry-Type Glucose Sensor Based on a Metal–Oxide–Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

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概要

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• In this paper, we present a novel dry-type glucose sensor based on a metal–oxide–semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance–voltage ($C$–$V$) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes $\Delta I$ before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The $\Delta I$ sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-10-15

著者

• Lin Jing-jenn

  Department Of Electrical Engineering National Taiwan University

• Wu You-lin

  Department Of Electrical Engineering National Chi-nan University

• Hsu Po-Yen

  Department of Electrical Engineering, National Chi Nan University, Puli, Nantou 545, Taiwan

• Wu You-Lin

  Department of Electrical Engineering, National Chi Nan University, Puli, Nantou 545, Taiwan

• Lin Jing-Jenn

  Department of Electronics Engineering, Fortune Junior College of Technology and Commerce, Kaohsiung 831, Taiwan

• Lin Jing-Jenn

  Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, Nantou, Taiwan 54561, R.O.C.

関連論文

• Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi_2 and TiSi_2 Gate Electrode Materials
• Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing
• Modeling Nanoscale Current Conduction in HfO2 High-$k$ Dielectrics
• Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
• Formation of One-dimensional Crooked Gold Nanocrystals by Electrochemical Technique with Surfactant Solution
• Improvement in the Cumulative Failure Distribution of High-$k$ Dielectric Subjected to Nanoscale Stress by D2 Post-Deposition Annealing
• Novel Dry-Type Glucose Sensor Based on a Metal–Oxide–Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

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