Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
スポンサーリンク
概要
- 論文の詳細を見る
In this work, the effect of the starting oxides with and without postoxidation annealing on the reoxidized nitrided gate oxides (RNO) and N_2O-annealed oxides (NAO) of metal-oxide-semiconductor (MOS) structures is discussed. It is found that both the radiation hardness and the constant-current stress resisitance can be improved if the starting oxides of the RNO and NAO are prepared without postoxidation annealing (i.e., fast pull-out from the furnace after the oxidation is completed). The improvements are related to the excess oxygen existing in the fast-pull-out oxides, which results in higher nitrogen incorporation in the oxide and reduces the strain gradient near the oxide interface.
- 社団法人応用物理学会の論文
- 1994-09-15
著者
-
Hwu Jenn-gwo
Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw
-
Hwu Jenn-gwo
Department Of Electrical Engineering Rm. 446 National Taiwan University
-
Wu You-lin
Department Of Electrical Engineering Rm. 446 National Taiwan University
-
Wu You-lin
Department Of Electrical Engineering National Chi-nan University
関連論文
- Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi_2 and TiSi_2 Gate Electrode Materials
- Local Thinning-Induced Oxide Nonuniformity Effect on the Tunneling Current of Ultrathin Gate Oxide(Semiconductors)
- Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing
- Rapid Thermal Post-Metallization Annealing in Thin Gate Oxides
- Modeling Nanoscale Current Conduction in HfO2 High-$k$ Dielectrics
- Low Temperature Ultra-thin Hafnium Oxide Dielectrics by Sputtering of Hf Metal on Tilted Substrate Followed by Nitric Acid Oxidation then Anodization Compensation in D. I. Water
- Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
- Oxide Resistance Characterization in MOS Structures by the Voltage Decay Method
- Effect of Mechanical Stress on Characteristics of Silicon Thermal Oxides(Semiconductors)
- Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method
- Improvement in the Cumulative Failure Distribution of High-$k$ Dielectric Subjected to Nanoscale Stress by D2 Post-Deposition Annealing
- Novel Dry-Type Glucose Sensor Based on a Metal–Oxide–Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer