Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing

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概要

• 論文の詳細を見る

• Postirradiation annealing was used to efficiently reduce the oxide leakage currents in MOS structures after sample preparation. Generally, it is found that leakage currents exist more or less in oxide no matter how the oxidation process changes. However, when a sample receives an irradiation of ^<60>Co with a total dose of 10^6 rads (SiO_2) and an anneal in N_2 at 400℃ for 10 minutes successively, its high-frequency and quasi-static capacitance-voltage (C-V) curves are nearly coincident in the accumulation region. It is shown that in each postirradiation annealing, the irradiation improves the oxide leakage current while the anneal recovers the radiation-induced damage. Both the bulk oxide leakage current and the surface leakage current are suitably improved after postirradiation annealing.

• 社団法人応用物理学会の論文
• 1990-11-20

著者

• Lin Jing-jenn

  Department Of Electrical Engineering National Taiwan University

• HWU Jenn-Gwo

  Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Tai

• Hwu Jenn-gwo

  Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw

• Lin Jing-Jenn

  Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, Nantou, Taiwan 54561, R.O.C.

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