Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Hwu Jenn-gwo

  Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw

• CHUANG Kai-Chieh

  Department of Electrical Engineering and Graduate Institute of Electronics Engineering National Taiw

関連論文

• Local Thinning-Induced Oxide Nonuniformity Effect on the Tunneling Current of Ultrathin Gate Oxide(Semiconductors)
• Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing
• Rapid Thermal Post-Metallization Annealing in Thin Gate Oxides
• Low Temperature Ultra-thin Hafnium Oxide Dielectrics by Sputtering of Hf Metal on Tilted Substrate Followed by Nitric Acid Oxidation then Anodization Compensation in D. I. Water
• Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
• Oxide Resistance Characterization in MOS Structures by the Voltage Decay Method
• Effect of Mechanical Stress on Characteristics of Silicon Thermal Oxides(Semiconductors)
• Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method

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