Oxide Resistance Characterization in MOS Structures by the Voltage Decay Method
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概要
- 論文の詳細を見る
The resistances of the gate oxides in MOS structures are determined based on the voltage decay method proposed in this work. This method provides nondestructive measurement of the oxide. The oxide resistance obtained by this method can be as high as 10^<14> ohms. Also, the unreliability of the data obtained by the conventional method, i.e., by dividing the applied voltage by the measured current, is compared. It is found that samples having the same initial C-V behavior can show significant differences in their oxide resistances. The one having a high oxide resistance can sustain a higher breakdown voltage than that having a low oxide resistance. A possible mechanism of the oxide resistance and the usability of the voltage decay method are also discussed.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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Hwu Jenn-gwo
Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw
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Hwu Jenn-gwo
Department Of Electrical Engineering National Taiwan University
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HO I-Hsiu
Department of Electrical Engineering, National Taiwan University
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Ho I-hsiu
Department Of Electrical Engineering National Taiwan University
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- Low Temperature Ultra-thin Hafnium Oxide Dielectrics by Sputtering of Hf Metal on Tilted Substrate Followed by Nitric Acid Oxidation then Anodization Compensation in D. I. Water
- Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
- Oxide Resistance Characterization in MOS Structures by the Voltage Decay Method
- Effect of Mechanical Stress on Characteristics of Silicon Thermal Oxides(Semiconductors)
- Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method