Local Thinning-Induced Oxide Nonuniformity Effect on the Tunneling Current of Ultrathin Gate Oxide(Semiconductors)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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Chen Wei-ren
Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw
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Hong Chao-chi
Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw
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HWU Jenn-Gwo
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Tai
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Hwu Jenn-gwo
Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw
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HONG Chao-Chi
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University
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CHEN Wei-Ren
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University
関連論文
- Local Thinning-Induced Oxide Nonuniformity Effect on the Tunneling Current of Ultrathin Gate Oxide(Semiconductors)
- Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing
- Rapid Thermal Post-Metallization Annealing in Thin Gate Oxides
- Low Temperature Ultra-thin Hafnium Oxide Dielectrics by Sputtering of Hf Metal on Tilted Substrate Followed by Nitric Acid Oxidation then Anodization Compensation in D. I. Water
- Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N_2O-Annealed Gate Oxides
- Oxide Resistance Characterization in MOS Structures by the Voltage Decay Method
- Effect of Mechanical Stress on Characteristics of Silicon Thermal Oxides(Semiconductors)
- Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method