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Advanced Device Development Dept., Renesas Technology Corp. | 論文
- Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
- Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
- Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
- W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory
- Magnetic Quantum Oscillations Due to Auger Recombination and Shockley-Read Recombination Processes in n-Hg_Cd_xTe
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS) (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Maximum Entropy Analysis of the 2D Density Turbulence Measured by MIR in TPE-RX
- Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
- A 90nm-node SOI Technology for RF Applications
- Proximity Gettering of Heavy Metals by High-Energy Ion Implantation