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Advanced Device Development Dept., Renesas Technology Corp. | 論文
- New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
- Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
- Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
- The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
- The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor
- Direct Measurement of Transient Drain Currents in Partially-depleted SOI NMOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- A 0.4 μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories
- A Novel CMOS Structure with Polysilicon Source/Drain (PSD) Transistors by Self-Aligned Silicidation (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology