Ahmed Haroon | Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
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概要
- 同名の論文著者
- Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)の論文著者
関連著者
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Ahmed Haroon
Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
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AHMED Haroon
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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ALTEBAEUMER Thomas
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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Altebaeumer Thomas
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
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Ahmed H
Univ. Cambridge Cambridge Gbr
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MIZUTA Hiroshi
Hitachi Cambridge Laboratory
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Durrani Zahid
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:crest Jst (japan Scien
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Ahmed Haroon
Microelectronics Research Centre University Of Cambridge Cavendish Laboratory
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Nakazato Kazuo
Hitachi Cambridge Lab. Hitachi Europe Cavendish Lab.
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NAKAZATO Kazuo
Hitachi Cambridge Laboratory
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Durrani Zahid
Microelectronics Research Centre University Of Cambridge Cavendish Laboratory
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Irvine Andrew
Microelectronics Research Centre University Of Cambridge Cavendish Laboratory
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Mizuta H
Hitachi Cambridge Laboratory:crest Jst (japan Science And Technology)
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Nakazato K
Hitachi Cambridge Laboratory:crest Jst (japan Science And Technology)
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神谷 武志
東京大学大学院電子工学専攻
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神谷 武志
東大工
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Tan Yong
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:crest Jst (japan Scien
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Taniguchi K
Osaka Univ. Osaka Jpn
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FURUTA Yoshikazu
Hitachi Cambridge Laboratory
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KAMIYA Toshio
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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DURRANI Zahid
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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TANIGUCHI Kenji
Electronics, Information Systems and Energy Engineering, Osaka University
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Katase Takayoshi
Aterials And Structures Laboratory Tokyo Institute Of Technology
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Cleaver John
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
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Cleaver John
Microelectronics Research Center Cavendish Laboratory
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Brown David
Department Of Chemical Engineering Faculty Of Engineering Tokyo Institute Of Technology
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Brown David
Department Of Chemistry University Of Cambridge
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神谷 利夫
Materials And Structures Laboratory Tokyo Institute Of Technology
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Ahmed Haroon
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
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Ahmed Haroon
Microelectronics Research Centre Cavendish Laboratory
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Ahmed Haroon
Miroelectronics Research Center Cavendish Laboratory University Of Cambridge
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POOLEY David
Microelectronics Research Centre, Cavendish Laboratory, Cambridge University
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HUSSAIN Tahir
Microelectronics Research Center, Cavendish Laboratory
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Pooley David
Microelectronics Research Centre Cavendish Laboratory Cambridge University
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Hussain Tahir
Microelectronics Research Center Cavendish Laboratory
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SATO Toshihiko
Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cavendish Laboratory
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JOHNSON Brian
Department of Chemistry, University of Cambridge
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Matsuoka H
Kyushu Inst. Technol. Iizuka Jpn
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Sato Toshihiko
Hitachi Cambridge Laboratory Hitachi Europe Ltd. Cavendish Laboratory
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Biesemans Serge
Advanced Silicon Devices Interuniversity Microelectronics Center (imec)
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Nakazato Kazuo
Hitachi Cambridge Laboratory Cavendish Laboratory
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Kamiya Toshio
Kochi Prefectural Industrial Technology Center
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MATSUOKA Hideyuki
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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LANGHEINRICH Wolfram
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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WOODHAM Richard
Microelectronics Research Centre, University of Cambridge, Cavendish Laboratory
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Furuta Yoshikazu
Hitachi Cambridge Laboratory:crest Jst (japan Science And Technology)
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Johnson Brian
Department Of Chemistry University Of Cambridge
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神谷 武志
Department Of Gastroenterology And Metabolism Nagoya City University Graduate School Of Medical Scie
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Taniguchi Kenji
Electronic Engineering At Osaka University
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Woodham Richard
Microelectronics Research Centre University Of Cambridge Cavendish Laboratory
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Altebaeumer T
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
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Altebaeumer Thomas
Miroelectronics Research Center Cavendish Laboratory University Of Cambridge
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Langheinrich Wolfram
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
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EVANS Gareth
Microelectronics Research Center, Cavendish Laboratory
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AHMED Haroon
Microelectronics Research Center, Cavendish Laboratory:CREST, Japan Science and Technology (JST)
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Ahmed Haroon
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
著作論文
- Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter
- Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers
- Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile
- Dithiol-Linked Gold Colloidal Particles Used for Fabricating Single Electron Transistors
- Transport Properties of Two Quantum Dots Connected in Series Formed in Silicon Inversion Layers
- Fabrication of Lateral Tunnel Junctions and Measurement of Coulomb Blockade Effects
- A High-Speed, Silicon-Based Few-Electron Memory Gain Cell
- Polycrystalline Silicon Single-Electron Transistor with Gate-Dependent Two-Period Current Oscillations
- Performance of Silicon Based bi-directional Electron Pumps Consisting of Two Coulomb Blockade Devices
- Tunnel Barrier Formation in Silicon Nanowires
- Characteristics of Electron Pump Circuits Using Silicon Multiple Tunnel Junctions
- Single Atom Lithography and its Applications
- Characteristic of Electron Pumps Based on Silicon Coulomb Blockade Devices
- The Multiple-Tunnel Junction and Its Application to Single-Electron Memory and Logic Circuits
- Performance of Silicon Based Bi-Directional Electron Pumps Consisting of Two Coulomb Blockade Devices
- Modelling of Structural and Threshold Voltage Characteristics of Randomly Doped Silicon Nanowires in the Coulomb-Blockade Regime : Semiconductors