Performance of Silicon Based Bi-Directional Electron Pumps Consisting of Two Coulomb Blockade Devices
スポンサーリンク
概要
- 論文の詳細を見る
Silicon-based bi-directional electron pumps, consisting of two Coulomb blockade devices, have been realized using highly-doped silicon-on-insulator material. The pump current depends linearly both on frequency and on amplitude within frequency and amplitude ranges. We discuss the non-linear behaviour outside these ranges and show how pump operation can be improved below the lower-frequency limit of linearity. Our data confirm that the upper frequency limit is determined by the Coulomb blockade device with higher resistance. Pump current peaks broaden and shift as the ac signal amplitude is increased. [DOI: 10.1143/JJAP.41.2694]
- 社団法人応用物理学会の論文
- 2002-04-30
著者
-
Ahmed Haroon
Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
-
ALTEBAEUMER Thomas
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
-
Altebaeumer T
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
-
Altebaeumer Thomas
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
関連論文
- Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter
- Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers
- Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile
- Dithiol-Linked Gold Colloidal Particles Used for Fabricating Single Electron Transistors
- Transport Properties of Two Quantum Dots Connected in Series Formed in Silicon Inversion Layers
- Fabrication of Lateral Tunnel Junctions and Measurement of Coulomb Blockade Effects
- A High-Speed, Silicon-Based Few-Electron Memory Gain Cell
- Polycrystalline Silicon Single-Electron Transistor with Gate-Dependent Two-Period Current Oscillations
- Performance of Silicon Based bi-directional Electron Pumps Consisting of Two Coulomb Blockade Devices
- Tunnel Barrier Formation in Silicon Nanowires
- Characteristics of Electron Pump Circuits Using Silicon Multiple Tunnel Junctions
- Single Atom Lithography and its Applications
- Characteristic of Electron Pumps Based on Silicon Coulomb Blockade Devices
- The Multiple-Tunnel Junction and Its Application to Single-Electron Memory and Logic Circuits
- Performance of Silicon Based Bi-Directional Electron Pumps Consisting of Two Coulomb Blockade Devices
- Modelling of Structural and Threshold Voltage Characteristics of Randomly Doped Silicon Nanowires in the Coulomb-Blockade Regime : Semiconductors