Single Atom Lithography and its Applications
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概要
- 論文の詳細を見る
A novel technique for single atom lithography has been developed for the fabrication of nanostructures. It is based on a focused ion-beam with a retarding field stage, which enables the ion impact energy to be reduced to any level down to 0eV. An ion detector has been designed and incorporated in the system which has a quantum detector efficiency close to 100% for high energy ion impacts and is capable of detecting the arrival of single Au^+ ions with energies as low as 30 eV. The system has been used to deposit nanostructures in the size range 1-5 nm in diameter. The relation of size to surface morphology and to beam parameters has been studied. A new system operating in UHV conditions has been commissioned to enhance the study, particularly with respect to nucleation of particles and surface mobility effects. Initial experiments on a Coulomb blockade device with islands fabricated with the system have been conducted.
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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Ahmed Haroon
Microelectronics Research Centre University Of Cambridge Cavendish Laboratory
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Ahmed Haroon
Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
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WOODHAM Richard
Microelectronics Research Centre, University of Cambridge, Cavendish Laboratory
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Woodham Richard
Microelectronics Research Centre University Of Cambridge Cavendish Laboratory
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- Performance of Silicon Based bi-directional Electron Pumps Consisting of Two Coulomb Blockade Devices
- Tunnel Barrier Formation in Silicon Nanowires
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- Characteristic of Electron Pumps Based on Silicon Coulomb Blockade Devices
- The Multiple-Tunnel Junction and Its Application to Single-Electron Memory and Logic Circuits
- Performance of Silicon Based Bi-Directional Electron Pumps Consisting of Two Coulomb Blockade Devices
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