Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile

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概要

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• We report the fabrication and performance of a new gallium arsenide (GaAs) metal semiconductor field-effect transistor (MESFET) device. The new device combines the concept of step-doping, where the doping of the channel is changed in a step, from high towards the source to low towards the drain, of the MESFET channels with that using a buried p-layer under the channel. Focused ion beams (FIBs) of silicon (Si) and beryllium (Be) were used, respectively, to implant the n-layer for the stepped channel and the p-layer at the channel substrate interface. A range of Be co-implantation doses and energies were studied for 150 keV channel implantation. The Be co-implanted layer improves the transconductance and pinch-off voltage of the devices by increasing the abruptness of the channel layer and reducing the substrate current. The available power from a step-doped device is high compared to uniform-channel devices with either low or high dopant concentration.

• 社団法人応用物理学会の論文
• 1994-04-15

著者

• Ahmed H

  Univ. Cambridge Cambridge Gbr

• AHMED Haroon

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

• Cleaver John

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge

• Cleaver John

  Microelectronics Research Center Cavendish Laboratory

• Ahmed Haroon

  Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)

• HUSSAIN Tahir

  Microelectronics Research Center, Cavendish Laboratory

• Hussain Tahir

  Microelectronics Research Center Cavendish Laboratory

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