Tunnel Barrier Formation in Silicon Nanowires
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概要
- 論文の詳細を見る
Multiple tunnel junctions have been realized in silicon using highly doped nanowires in silicon-on-insulator material by making use of pattern-dependent local oxidation. The electrical characteristics show clear Coulomb blockade oscillations of a single dot. On depleting the nanowires with side gates, peak pairing is observed in the oscillations. This characteristic of double dot structures can be explained by the creation of additional tunnel barriers in the nanowire due to the potential distribution caused by the dopants.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
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Ahmed Haroon
Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
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ALTEBAEUMER Thomas
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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Altebaeumer Thomas
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
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Ahmed Haroon
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
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