The Multiple-Tunnel Junction and Its Application to Single-Electron Memory and Logic Circuits
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概要
- 論文の詳細を見る
The multiple-tunnel junction (MTJ) produced by forming a side-gated constriction in δ-doped GaAs is demonstrated as a basic component of single electronics. A single-electron memory cell, in which one bit of information is represented by the excess or lack of a precise number of electrons, was fabricated and the operation was confirmed at liquid helium temperature. A new switching element, the variable-barrier MTJ, and a new circuit, the single-charge injection logic circuit, are proposed.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Ahmed Haroon
Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
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Ahmed Haroon
Microelectronics Research Centre Cavendish Laboratory
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Nakazato Kazuo
Hitachi Cambridge Laboratory Cavendish Laboratory
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Nakazato Kazuo
Hitachi Cambridge Lab. Hitachi Europe Cavendish Lab.
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