Hybrid Circuit Simulator Including a Model for Single Electron Tunneling Devices
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概要
- 論文の詳細を見る
A hybrid circuit simulator has been developed that incorporates elements of single electron devices into the conventional circuit simulator SPICE (Simulation Program with Integrated Circuit Emphasis). The elements can consist of an arbitrary network of tunnel junctions and capacitors, whose characteristics are calculated using a master equation method. By employing the hybrid circuit simulator, we studied a turnstile device feeding the input of a complementary metal-oxide-semiconductor (CMOS) inverter, and were able to more successfully demonstrate the transfer of electrons through the turnstile one by one in SPICE.
- 社団法人応用物理学会の論文
- 1999-04-15
著者
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Wagner M
Hitachi Cambridge Laboratory Cavendish Laboratory
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NAKAZATO Kazuo
Hitachi Cambridge Laboratory
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Kirihara Masaharu
Hitachi Cambridge Laboratory Cavendish Laboratory:(present Address)department Of Electronics And Inf
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WAGNER Mathias
Hitachi Cambridge Laboratory, Cavendish Laboratory
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Wagner Mathias
Hitachi Cambridge Laboratory Hitachi Europe Limited
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Nakazato K
Hitachi Cambridge Laboratory:crest Jst (japan Science And Technology)
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Nakazato Kazuo
Hitachi Cambridge Lab. Hitachi Europe Cavendish Lab.
関連論文
- Characterization of Tunnel Barriers in Polycrystalline Silicon Point-Contact Single-Electron Transistors
- Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter
- Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers
- Hybrid Circuit Simulator Including a Model for Single Electron Tunneling Devices
- Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
- The Multiple-Tunnel Junction and Its Application to Single-Electron Memory and Logic Circuits
- LO-Phonon Scattering and Electrical Bistability in Resonant Tunneling Diodes
- Turnstile Based Single-Electron Logic Devices