Turnstile Based Single-Electron Logic Devices
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
-
TSUKAGOSHI Kazuhito
International Center for Materials and Nanoarchitectonics, National Institute for Materials Science
-
Tsukagoshi Kazuhito
National Inst. Materials Sci. (nims) Ibaraki Jpn
-
Tsukagoshi Kazuhito
International Center For Materials Nanoarchitectonics National Institute For Materials Science
-
Tsukagoshi Kazuhito
International Center For Materials Nanoarchitectonics (mana) National Institute For Materials Scienc
-
Tsukagoshi Kazuhito
International Center For Materials And Nanoarchitectonics National Institute For Materials Science
-
Tsukagoshi Kazuhito
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
-
Tsukagoshi Kazuhito
Nanoscience Development And Support Team Riken
-
Tsukagoshi Kazuhito
Hitachi Cambridge Laboratory Hitachi Europe Ltd. Cavendish Laboratory
-
Nakazato Kazuo
Hitachi Cambridge Lab. Hitachi Europe Cavendish Lab.
-
Nakazato Kazuo
Hitachi Cambridge Laboratory Hitachi Europe Ltd. Cavendish Laboratory
関連論文
- Charge Transport Properties of Hexabenzocoronene Nanotubes by Field Effect : Influence of the Oligoether Side Chains on the Mobility
- Characterization of Tunnel Barriers in Polycrystalline Silicon Point-Contact Single-Electron Transistors
- Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter
- Quantum Dots in Carbon Nanotubes
- Determination of the Number of Graphene Layers : Discrete Distribution of the Secondary Electron Intensity Stemming from Individual Graphene Layers
- Inter-Layer Screening Length to Electric Field in Thin Graphite Film
- Coulomb Blockade Oscillations in Narrow Corrugated Graphite Ribbons
- Highly Reliable Bottom-Contact Pentacene TFTs with a Poly(p-chloroxylylene) Layer Selectively Grown on a Gate-Insulator
- Alignment-Free Top-Contact Formation for Organic Thin Film Transistors with Submicron-Length Channel
- Performance Enhancement of Thin-Film Transistors by Using High-Purity Semiconducting Single-Wall Carbon Nanotubes
- All-Solution-Processed Selective Assembly of Flexible Organic Field-Effect Transistor Arrays
- Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers
- Two-Dimensional Near-Field Optical Spectroscopy in Magnetic Fields up to 4T
- Hybrid Circuit Simulator Including a Model for Single Electron Tunneling Devices
- Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
- The Multiple-Tunnel Junction and Its Application to Single-Electron Memory and Logic Circuits
- Nano-Device Formation in a Multi-Wall Carbon Nanotube
- Turnstile Based Single-Electron Logic Devices
- Evaluation of Spin Hall Angle and Spin Diffusion Length by Using Spin Current-Induced Ferromagnetic Resonance
- Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon
- Evaluation of Spin Hall Angle and Spin Diffusion Length by Using Spin Current-Induced Ferromagnetic Resonance
- Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film
- Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film